| 摘要 |
A method is provided herein for the fine processing of InP epitaxial wafers including As, In and P for producing laser diodes, light-emitting diodes or photodiodes. The InP epitaxial wafer is selectively covered with striped protection mask films. The parts of the wafer which are uncovered by the protection mask films are first etched by an etchant which forms normal-mesas or mountain-shaped stripes under the masks, to provide a first-etched wafer. Then, the first-etched wafer is again etched by a gas of thermally-dissolved AsCl3 until the stripes have rectangle sections with erect surfaces. Buried layers of InP then are grown on the eliminated parts of the wafer.
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