PATTERN FORMING METHOD

摘要

PURPOSE:To form resist patterns having good shapes by increasing the contrast between exposed parts and unexposed parts at the time of silylation. CONSTITUTION:This pattern forming method has a stage for forming a material contg. a compd. which generates an acid by ArF light and a resin, a stage for patterning and exposing this material by using a desired mask and the ArF light 5, a stage for forming a monomolecular layer contg. Si in the exposed parts of the patterns of the resist and a stage for forming the resist patterns of a positive type by selectively dry etching and developing the resist. The patterns 2A having the good shapes are formed by the silylation provided with the contrast between the exposed and unexposed parts. This formation leads to the device production at an industrially good yield.