Halbleiterkristallstruktur und deren Herstellungsverfahren.

摘要

A novel structure of semiconductor crystal of compound semiconductor material. The semiconductor crystal has a plurality of unit layers (61) stratified periodically on a substrate (14), each unit layer (61) comprising at least one first semiconductor layer (21) consisting of a first atom mono layer of a first element and second atom mono layer of a second element, the first and second atom mono layers being stratified one over another alternately in a first deposition order, and at least one second semiconductor layer (41) consisting of the first atom mono layer and the second atom mono layer which are stratified one over another alternately in the reverse deposition order with respect to the first deposition order of the first semiconductor layer.