| 摘要 |
A metallization film layer (4) disposed on a semiconductor chip (1) is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities. The metal element less noble than Cu is at least one kind of members selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn. Cu alloy as the metallization film layer (4) improves corrosion resistance by adding a trace amount of a metal element less noble than Cu within such a range where electric conductivity is not much reduced to Cu without lowering high electric conductivity, high heat resistance and high electro-migration resistance of Cu. |
