| 摘要 |
PURPOSE: To provide a manufacturing method for the contact of a semiconductor device which prevents conductive substance to remain on an insulation film between the wiring layers, due to a high level difference and can minimize a contact area. CONSTITUTION: After an impurity diffused region 24 is formed on a predetermined part of an element isolation region of a substrate 22, a first insulation layer 26 is formed on the surface of the substrate. Next, a first conductive layer pattern 28A and a second insulation layer pattern 30A are formed on the first insulation layer. Moreover, after an etching barrier layer pattern has been formed on the second insulation layer pattern and a third insulation layer 34 has been formed on the barrier pattern layer and the first insulation layer, a third insulating layer is etched to expose the surface of barrier layer pattern and the third insulation layer 34 and first insulation layer 26 are etched to form a contact hole, using a photosensitive film pattern for contacting a mask. A spacer is formed to the sidewall of hole and a second conductive layer is formed on the substrate, including the contact hole and etching barrier layer. |
