| 摘要 |
<p>PURPOSE:To reduce a cost and to improve reliability of an insulating film by plasma spraying an insulating material such as Al2O3, etc., to an electrode in reducing atmosphere whose pressure is lowered using inert Ar gas containing no oxygen to form an insulating film. CONSTITUTION:An electrostatically attracting electrode is fixed to a lower electrode 7, a switch 14 is provided between the electrode and a DC power source 13, and the switch 14 is switched to apply a DC voltage to the attracting electrode 12. The electrode 12 is formed of an electrode 10 and an insulating film 11. The film 11 is formed by plasma spraying an insulating material obtained by adding TiO2 to Al2O3 in a reducing atmosphere in which inert gas such as Ar gas, etc., is reduced under pressure. Thus, the insulating material is prevented from being idized during the plasma spraying, an inherent resistance value is reduced, an insulating film having high permittivity is formed to improve an attracting force.</p> |
