| 摘要 |
A lateral bipolar transistor is provided in which the active base region comprises a layer of a material providing a predetermined valence band offset relative to the emitter and collector regions, to enhance transport of carriers from the emitter to the collector in a lateral manner. In particular, a silicon hetero-junction lateral bipolar transistor (HLBT) is provided. The lateral bipolar transistor structure and method of fabrication of the transistor is compatible with a bipolar-CMOS integrated circuit. Preferably the base region comprises a silicongermanium alloy or a silicon-germanium superlattice structure comprising a series of alternating layers of silicon and silicon-germanium alloy.
|
