发明名称 |
Three-dimensional memory structures having shared pillar memory cells |
摘要 |
A three-dimensional non-volatile memory system is disclosed including a memory array utilizing shared pillar structures for memory cell formation. A shared pillar structure includes two non-volatile storage elements. A first end surface of each pillar contacts one array line from a first set of array lines and a second end surface of each pillar contacts two array lines from a second set of array lines that is vertically separated from the first set of array lines. Each pillar includes a first subset of layers that are divided into portions for the individual storage elements in the pillar. Each pillar includes a second subset of layers that is shared between both non-volatile storage elements formed in the pillar. The individual storage elements each include a steering element and a state change element. |
申请公布号 |
US8120068(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20080344022 |
申请日期 |
2008.12.24 |
申请人 |
SCHEUERLEIN ROY E;HARARI ELIYAHOU;SANDISK 3D LLC |
发明人 |
SCHEUERLEIN ROY E;HARARI ELIYAHOU |
分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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