| 摘要 |
<p>PURPOSE: To easily increase the capacitance by forming second and third conductor layers on a semiconductor substrate, etching the third conductive layer anisotropically so as to form a cylindrical storage electrode, forming a dielectric film on the storage electrode and forming a plate electrode on the dielectric film. CONSTITUTION: A double cylindrical electrode consisting of a third conductive layer 66 is formed to both sidewalls of a spacer 64 by applying an anisotropic etching process to the third conductive layer 66 as an etching object, where the spacer 64 and a sacrificial layer 34 are used for an etching end point detection layer. Then a storage electrode 100, having the double cylindrical electrode, is formed by conducting the wet-etching process with an SBOE to remove the spacer 64 and the sacrificial layer 34. Since the storage electrode 100 is formed by 4-stages of vapor-deposition process in total, including three conductive layer vapor-deposition stages and one substance layer vapor-deposition stage, the process is simplified. Moreover, the thickness of the spacer to form the cylindrical electrode is adjusted to increase the capacitance.</p> |
