| 摘要 |
PURPOSE:To protect a magnetic thin film by forming a silicon dioxide film by a specified method in the state that the sustrate temperature is kept lower than a specified value, in a magnetoresistance element wherein a magnetic thin film having magnetoresistance effect is formed on a substrate, whose surface is coated with the silicon dioxide film. CONSTITUTION:A ferromagnetic metal thin film 2 is previously formed on the surface of a silicon substrate 1. After the film 2 is formed, a silicon dioxide protective film (SiO2 protective film) 3 is formed by a TEOS-03 based CVD method. That is, the silicon dioxide protective film 3 is formed in the state that the temperature of the substrate 1 is kept lower than 300 deg.C, or preferably kept at 275 deg.C, under the condition that the flow rate of reaction gas is Si-0.35 SLM, 0.2-7.5SLM and N2-18SLM where SLM shows the gas flow rate per lcm<3>. |
