| 摘要 |
<p>PURPOSE:To eliminate the decrease in a breakdown strength of a current detecting cell and obtain the same current detection output even if the carrier life times are different by locating the current detecting cell between main current-side unit cells. CONSTITUTION:A current detecting cell 31 is located between main current-side unit cells 32 or surrounded by them on four sides. Due to this structure, the creeping of holes from under bonding pad sections of the main current-side unit cells which are very much larger than the current detecting cell 31 is prevented and hole current is allowed to flow uniformly in both the current detecting cells and the main current-side unit cells. Therefore, the latchup current density of the current detecting cell 31 and that of the main current-side unit cells 32 are the same and precise current detection is possible. At the same time, the current detecting cell is not broken down by, what is called, the commutation dv/dt.</p> |
