Semiconductor device with improved operational speed

摘要

Semiconductor device (I) comprises: (a) a semiconductor substrate (1); (b) a 'foreign' atom region (3,4) formed on the surface of (1); (c) a first semiconductor layer (6,10a) connected to the region (3,4) on the substrate (1) with an insulating film between; and (d) a second semiconductor layer (7,10b) formed along the first semiconductor layer (10a,6) and contg. 'foreign' atoms, where concn. is higher than that of the 1st layer (6,10a). Prodn. of (I) is also claimed. (I) is produced by: (a) forming a 'foreign' atom region (3,4) on the surface of the substrate (1); (b) forming an insulating film (42) having a contact opening (9a,42a) reaching the 'foreign' atom region on the surface of the substrate; (c) producing a 1st layer (6,10a) on the opening (9a,42a) and the insulating film; (d) producing a second layer (7,10b) of certain 'foreign' atom concn. on the surface of layer (6,10a); and (e) treating the second layer (7,10b) and the first layer (6,10a) by heat treating at a certain temp. for a time so that the 'foreign atoms' in the layer (7,10b) diffuse into the layer (6,10a) to bond the layer (7,10b) and the 'foreign' atom region to the surface of the substrate (1).