| 摘要 |
Stress control using superlattice structuress for epitaxy on base wafer substrates, including AlN/GaN superlattices for epitaxy of GaN on silicon { 111 } substrates. Crack-free GaN cap layers can be grown over superlattice structures containing AlN/GaN superlattice layers. Compressive and tensile stress can be precisely adjusted by changing the thickness of the superlattice layers and the number of superlattice layers. For a constant period thickness, growth conditions, such as growth rate of GaN, V/III ratio during AIN growth, and growth temperature, can be adjusted. |
