| 摘要 |
PURPOSE: To provide a magnetic recording medium being fit for high density recording by using silicon whose resistivity has been reduced by doping with a group III or V element as a substrate and forming a magnetic recording layer on the substrate by sputtering under impressed bias voltage. CONSTITUTION: Single crystalline silicon is used as a substrate and a magnetic layer is formed on the substrate by sputtering to obtain the objective magnetic recording medium. The resistivity of the silicon has been reduced to <=0.01Ω.cm by doping with a group III element such as B or a group V element such as P at the time of crystal growth. Single crystalline silicon is suitable for use as the substrate of a magnetic recording medium from the viewpoint of mechanical strength, easiness of planning and heat resistance, and since the resistivity of the silicon is reduced, when sputtering is carried out at the time of forming an underlayer, a magnetic layer, a protective film, etc., film formation under impressed desired bias voltage is facilitated.
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