| 摘要 |
<p>PURPOSE: To obtain a microsensor in which no protrusion, caused by crystal defect, is left on time bottom face of a void made in a single crystal silicon substrate by anisotropic etching and a thin trim on the surface of the single crystal silicon substrate does not project above the void. CONSTITUTION: A void 40 is made in a single crystal silicon substrate 39 having (110) face on the rear side at a sensor part 20. Even if a crystal defect temporarily interrupting the anisotropic etching is present in the single crystal silicon substrate 39, etching proceeds under the defect to remove the defect and a void 40 having good shape is formed thus enhancing the accuracy at the sensor part 20. Since anisotropic etching does not proceed outward on the opposite sides of the sensor part 20, a thin film 29 does not project onto the void 40 thus strengthening the sensor part 20 being formed continuously thereon.</p> |
