SEMICONDUCTOR MEMORY, MEMORY DEVICE, AND MEMORY CARD

摘要

A semiconductor memory (1) having therein a plurality of memory blocks (2 and 3) equipped with numerous memory cells, a data input-output buffer (7), and a first control means (11) which controls the rewrite and read of data in and from the memory cells, further comprising a first storing means (30) which designates a partial defective memory block, and a detecting means (32) which detects the access to the defective memory block based on the address signal. When the detecting means (32) detects the access to the defective memory block, the first control means (11) suspends data rewrite operation despite the data rewrite operation despite the data rewrite instruction or suspends the data output operation of the buffer (7) despite the data read instruction. Because of the function of suspension, a memory device which is replaceable with a nondefective semiconductor memory can be obtained without fixing the level of potential at a specific address input terminal so that the defective memory block can be always non-selectable by only combining memory devices including an unrelievable semiconductor memory.