发明名称 METHOD FOR MANUFACTURING X-RAY EXPOSURE MASK
摘要 <p>PURPOSE: To improve the pattern position accuracy of an X-ray exposure mask by forming a thin film with a tensile stress suited for canceling compression stress generated by oxidation on the surface of a side wall on the side wall of the X-ray absorption body pattern. CONSTITUTION: In a process for manufacturing an X-ray exposure mask, after forming an X-ray absorption body pattern 1, a thin film 2 with a tensile stress suited for canceling compression stress generated by the oxidation of the surface of the side wall of the X-ray absorption body pattern 1 is formed by a chemical vapor growth method on the X-ray absorption body pattern. Then, the upper and lower thin films of the X-ray absorption body pattern are eliminated by an anisotropic dry etching method and only the thin film on the side wall of the X-ray absorption body pattern is left, thus canceling the compression stress generated by the oxidation of the surface of the side wall by the tensile stress of the thin film formed on it and improving the pattern position accuracy of the X-ray exposure mask.</p>
申请公布号 JPH0917711(A) 申请公布日期 1997.01.17
申请号 JP19950161653 申请日期 1995.06.28
申请人 NEC CORP 发明人 TANAKA YUSUKE
分类号 G03F1/22;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/22
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