| 摘要 |
<p>PURPOSE: To obtain a plasma treatment method in which a dry etching operation is performed to a wafer with excellent plane uniformity and with excellent reproducibility while the influence of radiant heat from a high-temperature wall at a plasma apparatus is prevented. CONSTITUTION: The temperature distribution of the surface of a stage 9 which holds a wafer W is made unequal so as to be capable of offsetting the lack of uniformity of radiant heat. In order to achieve this, two systems of refrigerant flow passages 11, 14 are formed in a concentric circle shape inside the stage 9, a refrigerant at a relatively low temperature is supplied to the refrigerant flow passage 11 outside so as to be circulated, and a refrigerant at a relatively high temperature is supplied to the refrigerant flow passage 14 inside so as to be circulated. Since the peripheral edge part of the stage 9 is cooled much more in this manner, the temperature rise at the peripheral edge part of the wafer W due to radiant heat from the inner wall surface of a plasma chamber 3 is offset. That is to say, the surface temperature distribution of the wafer W is made uniform, and a uniform dry etching operation is realized.</p> |
