发明名称 THIN-FILM TRANSISTOR AND PRODUCTION OF THIN-FILM TRANSISTOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a liquid crystal display device having lowresistance signal lines and high opening rate by forming one source and drain electrodes of transparent electrode materials and the other of metals. SOLUTION: An insulating substrate 1 is provided thereon with source and drain transparent conductive films 2 integrally formed with pixel electrodes and source drain metallic films 3 integrally formed with signal wirings and is provided with multilayered films composed of semiconductor films 4, gate insulating films 5 and gate metallic films 6 so as to overlap on the transparent conductive films 2 and the metallic films 3, respectively, at both ends thereof. Namely, the transparent conductive films 2 are made usable for the source and drain electrodes on the pixel electrode side where transparency is required and the metallic films 3 are made usable for the source and drain electrodes on the signal wiring side where low resistance is required like these TFTs. As a result, the production of the TFT-LCD (thin-film transistor liquid crystal display device) having signal lines of the low resistance and the high opening rate is made possible.</p>
申请公布号 JPH0990427(A) 申请公布日期 1997.04.04
申请号 JP19950273615 申请日期 1995.09.26
申请人 NEC CORP 发明人 HAYAMA HIROSHI;NISHIDA SHINICHI
分类号 G02F1/136;G02F1/1343;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
代理机构 代理人
主权项
地址