| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having very high performance and high reliability. SOLUTION: In a semiconductor device in which films 2 being an active area are stacked on a substrate 1 having an insulation face, the films 2 being the active area are crystallized with the use of an amorphous silicon film as a base and composed of crystalline silicon films in substantially a monocrystal state that respective pillar crystals in crystal particles are coupled to each other. Since the films 2 being the active area are in the monocrystal state, a movement speed of carriers can be made faster, etc., and characteristics are enhanced.</p> |
