| 摘要 |
A process for manufacturing an electronic interconnect structure, the process including the steps of: a) depositing an adhesion metal layer over a dielectric material surface having at least one exposed aluminum surface; b) depositing a barrier metal layer over the adhesion metal layer; c) depositing a layer of aluminum over the barrier metal layer; d) depositing a seccnd barrier metal layer over the layer of aluminum; e) applying a photoresist layer on top of the second barrier metal layer; f) exposing and developing the photoresist layer; g) removing the exposed barrier metal and photoresist layer, leaving a layer of barrier metal over the aluminum layer; h) converting those portions of the layer of aluminum which are not ccvered by barrier metal to a porous aluminum oxide by porous anodization; i) removing the porous aluminum oxide; and j) removing the exposed barrier metal and adhesion metai layers to leave exposed patterned aluminum. <IMAGE> |
