| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of heat treating a ZnSe single crystal low in dislocation density with excellent reproducibility. SOLUTION: The ZnSe single crystal is formed into a columnar body having the relation of (cross-sectional area vertical to axis direction)<0.5>×(length in the axial direction) <= 4.5cm<2> and 0.5-5cm length in the axial direction, inserted along the axis of a reactor, sealed in vacuum and heat treated at 800-1300 deg.C for >=10hr. The heat treatment is executed by moving the reactor, in which the single crystal is sealed in vacuum, back and forth one or more times at the moving rate of 1-10cm/hr in a heating furnace having a low temp. part of <=800 deg.C, a temp. rising part at a temp. rising gradient of 10-100 deg.C/cm, a high temp. part of 800-1300 deg.C, a temp. lowering part at a temp. lowering gradient of -100 to -10 deg.C/cm and a low temp. part of <=800 deg.C.
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