| 摘要 |
PROBLEM TO BE SOLVED: To realize planarization which is superior in in-plane uniformity and little dependent on patterns. SOLUTION: On condition that a trench isolation technology is adopted, in a manufacture method is which each device is isolated, a step of forming first films 2, 3 and a second film 4 on a silicon substrate 1 in order, a step of forming element isolation grooves 5 in the silicon substrate 1 by using the film films 2, 3 and the second film 4 which are patterned as masks, and a step of growing silicon dioxide 6, which is produced by a reaction between ozone and tetraethoxysilan in element isolation grooves 5 in which silicon is exposed, are included, and the growth rate of silicon dioxide on the above patterned films is lower than that of silicon.
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