发明名称 Verfahren zur Bestimmung von Tiefenprofilen im Dünnschichtbereich
摘要 The invention relates to a method to determine depth profiles in an area of thin coating of solid substrates comprising the following steps: production of an ion beam with a substantial amount of ions having a molecular weight above 32 and consisting of at least 3 atoms; focusing of ion beam on substrate surface whereby ions break down into two components upon impact and impact energy of the individual atoms or molecular fragments is sufficient for the removal of the upper coating as defined and interaction of particles bombarded by the solid body does not lead to a coating to be formed; defined removal of surface coatings occurring by ionic beam sputter process; determining of concentration of sputtered components removed from the substrate surface by means of a measuring probe with a measuring and evaluation circuit connected downstream.
申请公布号 DE19641981(A1) 申请公布日期 1998.04.16
申请号 DE19961041981 申请日期 1996.10.11
申请人 BENNINGHOVEN, A., PROF. DR., 48161 MUENSTER, DE 发明人 BENNINGHOVEN, A., PROF., DR., 48161 MUENSTER, DE;NIEHUIS, E., DR., 48308 SENDEN, DE
分类号 H01J37/252;G01B15/00;H01J37/30;H01J49/14;(IPC1-7):C23F4/00;G01N27/62 主分类号 H01J37/252
代理机构 代理人
主权项
地址