| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory which can perform simultaneously writing plural data in a fuse writing system selecting a fuse using a main memory cell decoder. SOLUTION: Plural fuse cells are simultaneously written using a main memory cell decoder and an external input signal (I/O input signal) as a means at the time of writing a fuse cell simultaneously. This device is provided with main memory cell decoders 30-33 selecting some one pair of fuse cell, writing voltage load transistors 21, 25 selected by the main memory cell decoder, selecting transistors 22-28 selecting individual fuse using an external input signal 10-In, and fuse cells 11-16.</p> |
