发明名称 |
Sensing scheme for flash memory with multilevel cells |
摘要 |
Methods and apparatus for determining the state of a memory cell having more than two possible states are disclosed. For a first embodiment, the state of a flash cell having n states, where n is a power of 2, is determined by selectively comparing the threshold voltage Vt of a selected memory cell to (n-1) reference voltages. For every two states, a single comparator is provided such that the total number of comparators is equal to the number of bits stored in the memory cell.
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申请公布号 |
US5748546(A) |
申请公布日期 |
1998.05.05 |
申请号 |
US19970827670 |
申请日期 |
1997.04.10 |
申请人 |
INTEL CORPORATION |
发明人 |
BAUER, MARK E.;TALREJA, SANJAY;FRARY, KEVIN W.;ATWOOD, GREGORY;FAZIO, ALBERT;JAVANIFARD, JOHNNY |
分类号 |
G11C13/00;G11C11/56;(IPC1-7):G11C7/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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