| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable a sense amplifier for flash EPROM to be used in a low power source voltage by providing a stand-by charging circuit and a low voltage operating option in a conventional sense amplifier for flash EPROM. SOLUTION: This sense amplifier has a conventional sense amplifier provided with one piece of a P-channel transistor and one piece of an N-channel transistor for a power downtime, 6 pieces of N-channel transistors for bias circuit and two pieces of floating gate reference memory cells MFR1, MFR2 for comparison. A stand-by charging circuit has two pieces of N-channel transistors for a default output and one piece of a floating gate memory cell and three pieces of N-channel transistors for precharging bit lines. Moreover, one piece of capacitor and two pieces of P-channel transistors for allowing the sense amplifier are provided for the operation in a lower voltage range.</p> |
