| 摘要 |
PROBLEM TO BE SOLVED: To provide a means of efficiently forming a resist pattern almost free from unevenness in dimensions required to produce a fine element almost free form unevenness in characteristics, e.g. a quantum effect device. SOLUTION: A resist pattern almost free from unevenness in dimensions is formed under conditions which attains high sensitivity by using a cyclic or basket like polymer based on Si and O atoms, e.g. polyhydrogen silsesquioxane having a basic structure represented by the formula as a resist forming polymer and an aq. alkali soln. as a developer. A fine element almost free from unevenness in characteristics, e.g. a quantum effect device is produced using the resist pattern. |
