发明名称 |
MANUFACTURING METHOD OF FARADAY ROTATOR |
摘要 |
PROBLEM TO BE SOLVED: To manufacture a Faraday rotator without polishing the surface of a bismuth substituted rare-earth iron garnet single crystal film having thickness of more than 150μm which is made to grown on one side surface of a non-magnetic garnet single crystal substrate by a liquid phase epitaxial method. SOLUTION: After growing crystals, a molten liquid deposited on a bismuth substituted rare-earth iron garnet single crystal film is shaken off and the operations until the film is housed from a liquid phase epitaxial growing furnace to a slow cooling furnace having internal temperature of 400 to 550 deg.C are completed within 20 minutes after growing the crystals. Then, after the film is cooled down to a room temperature, the solidified molten liquid components deposited on the film are dissolved by an acid to be removed and is made to a Faraday rotator as it is in an unpolished state. Thus, the film having thickness of more than 150μm with a substrate is obtained capable of using as a Faraday rotator without polishing.
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申请公布号 |
JPH10307283(A) |
申请公布日期 |
1998.11.17 |
申请号 |
JP19970115721 |
申请日期 |
1997.05.06 |
申请人 |
MITSUBISHI GAS CHEM CO INC |
发明人 |
HIRAMATSU MASAO;SHIRAI KAZUSHI;ISHIKURA KENJI;TAKEDA NORIO |
分类号 |
G02F1/09;C30B29/28;(IPC1-7):G02F1/09 |
主分类号 |
G02F1/09 |
代理机构 |
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主权项 |
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