发明名称 MANUFACTURING METHOD OF FARADAY ROTATOR
摘要 PROBLEM TO BE SOLVED: To manufacture a Faraday rotator without polishing the surface of a bismuth substituted rare-earth iron garnet single crystal film having thickness of more than 150μm which is made to grown on one side surface of a non-magnetic garnet single crystal substrate by a liquid phase epitaxial method. SOLUTION: After growing crystals, a molten liquid deposited on a bismuth substituted rare-earth iron garnet single crystal film is shaken off and the operations until the film is housed from a liquid phase epitaxial growing furnace to a slow cooling furnace having internal temperature of 400 to 550 deg.C are completed within 20 minutes after growing the crystals. Then, after the film is cooled down to a room temperature, the solidified molten liquid components deposited on the film are dissolved by an acid to be removed and is made to a Faraday rotator as it is in an unpolished state. Thus, the film having thickness of more than 150μm with a substrate is obtained capable of using as a Faraday rotator without polishing.
申请公布号 JPH10307283(A) 申请公布日期 1998.11.17
申请号 JP19970115721 申请日期 1997.05.06
申请人 MITSUBISHI GAS CHEM CO INC 发明人 HIRAMATSU MASAO;SHIRAI KAZUSHI;ISHIKURA KENJI;TAKEDA NORIO
分类号 G02F1/09;C30B29/28;(IPC1-7):G02F1/09 主分类号 G02F1/09
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