Single phase lead-free cubic pyrochlore bismuth zinc niobate-based dielectric materials and processes for manufacture

摘要

Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y), with 0≦x<0.23 and 0≦y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.

主权项

1. A dielectric material comprising:
a single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric material with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y), with 0.10≦x≦0.20 and 0.2≦y≦0.6; said BZN-based dielectric material having at least one of a maximum applied electric field of at least 5.0 MV/cm at 10 kHz, a maximum energy storage at 25° C and 10 kHz of at least 60 J/cm3 and a maximum energy storage at 200° C and 10 kHz of at least 30 J/cm3 .