| 摘要 |
PROBLEM TO BE SOLVED: To provide the quartz crucible by which the influence of bubbles contained in the crucible is eliminated and the conversion of a dislocation-free silicon single crystal into a dislocation-containing silicon single crystal is not caused even at the time of performing a silicon single crystal pulling-up operation over a long period of time. SOLUTION: This quartz crucible has the following characteristics: (1) the diameter of bubbles contained in an inner surface layer of the quartz crucible, which layer has a >=1 mm thickness from the inner surface of the crucible, is <=20μm and also, the total bubble volume percentage in the inner surface layer is <=0.01%, or preferably, <0.001%; and further, (2) in the bottom or corner part of the quartz crucible, the diameter of bubbles contained in an inner surface layer of that part of the crucible, which layer has a >=1 mm thickness from the inner surface of the part, is <=20μm and also, the total bubble volume percentage in this inner surface layer is <=0.01%, or preferably, <=0.001%.
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