| 摘要 |
<p>A method of growing a Group III-V nitride buffer layer on a substrate made of a different material by molecular beam epitaxy is provided, which compensates for lattice mismatching between a material of the substrate and a material of a further layer to be grown on the substrate. The method includes the steps of: placing the substrate in a vacuum chamber at a reduced pressure suitable for epitaxial growth and at an elevated temperature; and supplying species to the vacuum chamber to be used in the epitaxial growth including a nitrogen precursor species supplying nitrogen to the substrate to cause epitaxial growth on the substrate of the buffer layer. The elevated temperature is in the range of 300 to 800 °C, and a supply rate of nitrogen to the substrate is such as to cause epitaxial growth on the substrate of the Group III-V nitride buffer layer of uniform thickness less than 2000 Å at a growth rate in the range of 2 to 10 νm/hr.</p> |
