| 摘要 |
<p> An exposure method, wherein, when illuminating light (EL) is applied from an illuminating system (12, M, 44) to a pattern surface of a mask (R) at a predetermined incident angle υ, it is reflected off the pattern surface, the reflected light being projected onto a substrate (W) by a projection optical system (PO), whereby the pattern in a region on the mask (R) illuminated by the illuminating light is transferred to an upper surface of the substrate (W), a stage control system synchronously moving a mask stage (RST) and a substrate stage (WST) in a Y-direction during the pattern transfer operation while regulating a relative position in a Z-direction of the mask (R) with respect to the projection optical system (PO) on the basis of predetermined regulating position information, this enabling the occurrence of magnifying power error and displacement of a transfer image of the pattern on the substrate (W), which is ascribed to Z-displacement of the mask, to be effectively minimized in spite of the fact that a mask side portion of the projection optical system is nontelecentric, and the accuracy of superposition to be thereby improved, this method being suitably used, especially, for the exposure of a high resolution using illuminating light in a soft X-ray region.</p> |
