| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device, which has improved drain disturbance characteristics, and a method of manufacturing the device. SOLUTION: A nonvolatile semiconductor storage device is provided with a laminated gate part 10 formed by laminating a tunnel insulting film 2, a floating gate electrode 3, a capacitor insulating film 4 and a controller gate electrode 5 on a p-type substrate 1. An n<++> arsenic-containing drain layer 26a, an n<++> source layer 26b, an n<+> drain layer 22 and an n<+> source layer 20 are provided in the substrate 1. Moreover, an n<-> layer 23 which contains phosphorus and overlaps with the end part extending along the widthwise direction of the gate part 10 as a whole, and a p-type layer 24 which encircles the layer 22 and the bottom of the layer 23, are provided on the side of a drain in the substrate 1. With this structure of the nonvolatile semiconductor storage device, an electric field which is applied between the electrode 3 and the drain is relaxed at the time of a write operation, and the drain disturbance characteristics of the device are enhanced.</p> |
