发明名称 LARGE AREA SILENT DISCHARGE EXCITATION RADIATOR
摘要 <p>Ultraviolet and vacuum ultraviolet radiators (100) for use in the manufacture of semiconductors are provided which have improved lifetimes, improved distribution of radiation generation, improved distribution of emitted radiation, increased efficiency of radiation emission, and improved means for cooling. The radiators (100) have novel electrodes (106), novel electrode configurations, novel means for distributing plasmas between electrodes, and have novel cooling means. These features enable the miniaturization of the radiators permitting high intensity and uniform radiation exposure of planar surfaces. The radiators are used in the pre-treatment of semiconductor surfaces, the deposition of semiconductor thin films, and the post-deposition processing of semiconductor thin films.</p>
申请公布号 WO1999041767(A1) 申请公布日期 1999.08.19
申请号 US1999002948 申请日期 1999.02.10
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