| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which the time required for batch writing and batch erasing can be shortened and a chip area can be reduced without adding special constitution. SOLUTION: A non-volatile semiconductor memory is provided with a mode signal output circuit 23 outputting a whole chip selecting signal CP for performing writing or erasing en bloc for a memory cell, and a group selection output circuit 19 outputting a word line group selecting signal B selecting a row decoder group RD corresponding to a word line WL of a memory cell in which writing or erasing is to be performed en bloc adjusting timing to an output of the whole chip selecting signal CP. Further, the non-volatile semiconductor memory is provided with a pre-decoder 11 for selecting block selecting a row decoder group RD controlling a word line WL corresponding to the word line group selecting signal B conforming to the word line group selecting signal B, and a pre-decoder 12 for selection in block selecting a word line WL corresponding to a memory cell in which writing or erasing is to be performed en bloc out of plural word lines WL controlled by the row decoder group RD selected by the pre-decoder 11 for selecting block.</p> |
