发明名称 |
INPUT PROTECTIVE CIRCUIT, ANTIFUSE ADDRESS DETECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED-CIRCUIT DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an input protective circuit which performs a programming operation precisely by using a high voltage, to provide an antifuse address detection circuit and to provide a semiconductor integrated-circuit device. SOLUTION: An input protective circuit in a semiconductor integrated-circuit device has a bipolar transistor laid out with reference to a wiring layer M1a. An N-type active region 106 in the bipolar transistor is connected to the electrode 116 of a programmed element. The electrode 116 is connected to the wiring layer M1a. The wiring layer M1a supplies a high voltage in order to damage the dielectric of the programmed element. The voltage of a P-type well 104 is adjusted from the outside via a resistance element N10. Thereby, an erroneous program due to a surge coming from the wiring layer M1a can be prevented.</p> |
申请公布号 |
JP2000011684(A) |
申请公布日期 |
2000.01.14 |
申请号 |
JP19980171499 |
申请日期 |
1998.06.18 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
OISHI TSUKASA;SHIMANO HIROKI;HIDAKA HIDETO;TOMISHIMA SHIGEKI |
分类号 |
G11C17/18;G11C29/00;G11C29/04;H01L21/822;H01L27/04;(IPC1-7):G11C29/00 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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