发明名称 INPUT PROTECTIVE CIRCUIT, ANTIFUSE ADDRESS DETECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED-CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide an input protective circuit which performs a programming operation precisely by using a high voltage, to provide an antifuse address detection circuit and to provide a semiconductor integrated-circuit device. SOLUTION: An input protective circuit in a semiconductor integrated-circuit device has a bipolar transistor laid out with reference to a wiring layer M1a. An N-type active region 106 in the bipolar transistor is connected to the electrode 116 of a programmed element. The electrode 116 is connected to the wiring layer M1a. The wiring layer M1a supplies a high voltage in order to damage the dielectric of the programmed element. The voltage of a P-type well 104 is adjusted from the outside via a resistance element N10. Thereby, an erroneous program due to a surge coming from the wiring layer M1a can be prevented.</p>
申请公布号 JP2000011684(A) 申请公布日期 2000.01.14
申请号 JP19980171499 申请日期 1998.06.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 OISHI TSUKASA;SHIMANO HIROKI;HIDAKA HIDETO;TOMISHIMA SHIGEKI
分类号 G11C17/18;G11C29/00;G11C29/04;H01L21/822;H01L27/04;(IPC1-7):G11C29/00 主分类号 G11C17/18
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