SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS AND MEMORY CARD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To shorten a data write time at a flash memory. SOLUTION: When a user selects a write operation of a high-speed mode, a switch control signal is input to a switch circuit 18 by a command or the like and a voltage of approximately -13.7v generated by a high-speed voltage generation circuit 15 is output as a word line potential. Normally, a voltage of approximately -12.5v generated by a voltage generation circuit 16 is output as the word line potential. Since the write voltage for the high-speed mode of approximately -13.7v higher than at the normal write is output from the switch circuit 18, a write speed can be increased higher than at the normal write.