| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of writing data in a block erasure type nonvolatile memory at a low cost and efficiently at a high speed. SOLUTION: Each memory chip forming a memory part 4 is used by dividing them into a first memory 4a to a fourth memory 4d being memory groups of the double number with respect to the number of two buffer memories of a first buffer memory 7 and a second buffer memory 8 in which data of a unit erasure block can be stored so that consecutive logical addresses are assigned to a different memory group for every unit erasure block.</p> |
