| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent generation of a polishing flaw, and to increase the amount of liberated abrasive grains and to perform a high-speed flattening machining of a wafer surface pattern by a method wherein when the wafer surface pattern is to be polished by a grinding stone, a dispersion agent for accelerating the discharge of the liberated abrasive grains is added to a machining liquid. SOLUTION: A grinding stone is constituted of abrasive grains 3, a resin 24 for bonding the abrasive grains and pores 26, and the abrasive grains are separated into abrasive grains 23 fixed in the grinding stone and abrasive grains 27 liberated from the stone into a cooking liquid according to their states. A dispersion agent 29 is added to the machining liquid for increasing the discharge amount of the liberated abrasive grains. In an anionic surfactant dispersion agent, for example, the dispersion agent molecules are adsorbed on the surfaces of solid materials, such as the abrasive grains, and a state that the surfaces of the solid are charged in a negative state is made. As a repulsive force works between the abrasive grains and between the abrasive grains and the grinding stone by that charge, the dispersibility of the dispersion agent is enhanced. As the surfactant concentratedly exists on only the interfaces between the abrasive grains and the grinding stone and between the stone and the machining liquid, a liberation of the abrasive grains from the surface of the stone is accelerated by the action of the dispersion agent 29.</p> |
