| 摘要 |
<p>The invention relates to a method of etching a feature (318) in an oxide layer (314) using a photoresist mask (310), the oxide layer being disposed above an underlying layer (316) of a substrate inside an inductively-coupled plasma processing chamber. The method includes flowing an etchant source gas that includes CH?2F2,C4F8 and O2 or C3H3F5,C4F8 and O2¿ into the plasma processing chamber. The method further includes forming a plasma from the etchant source gas. The method additionally includes etching through the oxide layer (314) of the substrate with the plasma, wherein the etching substantially stops on the underlying layer (316), the underlying being of a silicon layer, a tungsten-based layer or a TiN layer.</p> |
