METHOD FOR FORMING DUAL DAMASCENE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a dual damascene of a semiconductor device is provided to reduce the loss of an oxide layer by arranging a contact plug with respect to a contact of a damascene. CONSTITUTION: A semiconductor substrate is formed with a bit line contact plug(5) and a storage node contact plug(6). A first oxide layer(7) and a silicon oxynitride layer(8) are formed on the semiconductor substrate and a second oxide layer(9) is formed thereon. On the second oxide layer(9), a bit line damascene line/space mask(10) is formed. The second oxide layer(9) is selectively removed by using the bit line damascene line/space mask(10) so that a line/space pattern is formed. After removing the bit line damascene line/space mask(10), a bit line damascene contact mask is formed on the structure. Then, a contact pattern for exposing the bit line contact plug(5) is formed by selectively removing the first oxide layer(7) and silicon oxynitride layer(8) by using the bit line damascene contact mask.