| 摘要 |
PROBLEM TO BE SOLVED: To form a ferroelectric memory circuit by performing first annealing in ozone atmosphere, forming/defining an upper electrode on a ferroelectric layer, performing second annealing, defining a lower electrode and then performing third annealing. SOLUTION: When a ferroelectric memory circuit is formed, a lower electrode structure is formed on an underlying layer and a ferroelectric layer is provided on the lower electrode. Subsequently, a step for performing first annealing in ozone atmosphere, a step for forming/defining an upper electrode on the ferroelectric layer, a step for defining a lower electrode, and a step for performing third annealing are carried out sequentially. Preferably, an individual contact window reaching the upper and lower electrodes is defined in a glass layer, Fourth annealing is performed, a contact window is formed in a substrate to the glass layer, a metallization layer is formed/defined on the glass layer and in the contact window, and then fifth annealing is performed. |
