发明名称 Verfahren zur Herstellung eines integrierten Schaltkreises
摘要 A first casting mould area (8) and a second casting mould area (9) are moved towards each other in such a way that a cavity (11) for receiving a leadframe (2) is formed and that at least one first contact area (12) of the first casting mould area (8) rests against a second contact area (13) of the second casting mould area (9). The cavity (11) can be filled with plastic material. The plastic housing (4) of the resulting electrical circuit (1) is provided with an even surface without burr at least in the area of a centring section (5).
申请公布号 DE19908186(A1) 申请公布日期 2000.09.07
申请号 DE1999108186 申请日期 1999.02.25
申请人 SIEMENS AG 发明人 HAUSER, CHRISTIAN;VIDAL, ULRICH
分类号 H01L21/56;(IPC1-7):H01L21/56 主分类号 H01L21/56
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