发明名称 APPARATUS FOR PROCESSING MATERIAL AT CONTROLLED TEMPERATURES
摘要 <p>Semiconductor processing apparatus, including a chamber, into which a semiconductor wafer is introduced for processing thereof and a heater, which heats the wafer in the chamber. A radiation guide collects thermal radiation from a selected region of the wafer. A wafer support assembly supports the wafer and shields the radiation guide from radiation other than radiation from the region. A pyrometer, coupled to receive the radiation from the guide, analyzes the radiation to determine a temperature of the region, for use in controlling the processing.</p>
申请公布号 WO2000063951(A1) 申请公布日期 2000.10.26
申请号 IB2000000472 申请日期 2000.04.18
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