MASK FOR ELECTRON BEAM EXPOSURE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To make formation of a fine pattern compatible with improvement of mechanical strength. SOLUTION: A mask l for electron beam exposure consists of a board part 2 on which apertures 3 are formed, and a thin-film part 4 retained with the board part 2. On the thirrfilm part 4, a thin semiconductor active film (first semiconductor film) 6A and a thick semiconductor active film (second semiconductor film) 6B thicker than the film 6A are formed. A fine pattern part 7A, having small diameter apertures 8A, is formed on the thin semiconductor active film 6A, and a large dimensional pattern part 7B having large diameter apertures 8B is formed on the thick semiconductor active film 6B.