| 摘要 |
PROBLEM TO BE SOLVED: To produce a film-forming composition capable of forming a silica film excellent in coating uniformity of a coating film, the property of low relative dielectric constant and mechanical strength after PCT(Pressure Cooker Test) as a material for forming an interlaminar insulating film in a semiconductor element or the like. SOLUTION: The film-forming composition comprises (A) a hydrolyzed condensate produced by subjecting at least one silane compound selected from the group consisting of a compound represented by the following formula 1 a compound represented by the following formula 2 and a compound represented by the following formula 3 to hydrolysis and condensation reaction in the presence of (B) a compound represented by the following formula 4 and (C) water, and (D) an organic solvent : Ra(Si)(OR1)4-a 1, Si(OR2)42, R3b(R4O)3-bSi-(R7)d-Si(OR5)3cR6c 3, MFe 4, (wherein R, R3 and R6 each denote H, F or a monovalent organic group; R1, R2, R4 and R5 each denote a monovalent organic group; R7 denotes O, a phenylene group or -(CH2)n-; a denotes an integer of 1 or 2 ; b and c each denote a number of 0 to 2; d denotes 0 or 1; n denotes an integer of 1 to 6; M is a metal atom; and e denotes a valence of the metal atom M).
|
