| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a film transistor in which an etch stop material remains in a source/drain isolation etching process, and which solves a problem of deterioration of source/drain interface characteristics, and decreases the required number of optical masks. SOLUTION: A method for manufacturing a film transistor comprises the step that, after a gate insulation layer 22, a channel layer 23, a joining layer 24, a source/drain layer 25, and a data conductor layer 26 are formed in this order on an insulation substrate 20 having a gate conductor structure 21, by use of an etching process of an optical mask photolithography, at superior selection etching ratios present respectively between the joining layer 24 and the source/drain layer 25 and channel layer 23, the data conductor layer, source/ drain layer and joining layer are consecutively etched, and the data conductor structure and source/drain structure are restricted.</p> |
