| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a phase shift mask capable of making the intensity of a light passing through the opening of a substrate equal to that of a light passing through a phase shifter and capable of enhancing the uniformity of resolution patterns formed in the phase shifter part and the opening of the transparent substrate. SOLUTION: In the phase shift mask obtained by forming a light shielding film 51 with a desired opening pattern on a light transmissive substrate 50 and forming a phase shift material 52 which causes phase shift to transmitted light in a part of the opening pattern, buffer films 53 consisting of the same material as the phase shift material 52 is formed in both a transmission part 501 and a shifter part 502 and the thickness of the buffer film 53 is adjusted to h=(λ/4ns). m-ns/ns-1)} (where ns is the refractive index of the shifter;λis the wavelength of light for exposure; and (m) is an integer) in such a way that light passes though the transmission part 501 and the shifter part 502 at the same transmittance.</p> |
