| 发明名称 |
Fabrication process of a semiconductor device |
| 摘要 |
A method of fabricating a semiconductor device includes the steps of forming a first insulation film on a substrate by a spin-on process, applying a curing process to the first insulation film at a temperature of 380-500° C. over a duration of 5-180 seconds, and forming a second insulation film on the first insulation film by a spin-on process. |
| 申请公布号 |
AU6786101(A) |
申请公布日期 |
2002.01.14 |
| 申请号 |
AU20010067861 |
申请日期 |
2001.06.28 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KAORU MAEKAWA;SATOHIKO HOSHINO;MASAHITO SUGIURA;FEDERICA ALLEGRETTI |
| 分类号 |
H01L21/3105;H01L21/312;H01L21/314;H01L21/316;H01L21/318;H01L21/768;H01L23/522 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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